rev.1.00, oct.01. 2003, page 1 of 9 H5N2801P silicon n channel mos fet high speed power switching rej03g0118-0100z rev.1.00 oct.01.2003 features ? low on-resistance ? low drive current ? high speed switching outline to-3p 1 2 3 d s g 1. gate 2. drain (flange) 3. source
H5N2801P rev.1.00, oct.01. 2003, page 2 of 9 absolute maximum rating (ta = 25 c) item symbol rating unit drain to source voltage v dss 280 v gate to source voltage v gss 30 v drain current i d 60 a drain peak current i d (pulse) note1 240 a body-drain diode reverse drain current i dr 60 a avalanche current i ap note3 35 a avalanche energy e ar note3 74.5 mj channel dissipation pch note2 150 w channel to case thermal impedance ch-c 0.833 c /w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c
H5N2801P rev.1.00, oct.01. 2003, page 3 of 9 electrical characteristics (ta = 25 c) item symbol min typ max unit test condition drain to source breakdown voltage v (br)dss 280 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ??1 av ds = 280 v, v gs = 0 gate to source leak current i gss ??0.1 av gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.5 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 27 45 ? s i d = 30 a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.034 0.043 ? i d = 30 a, v gs = 10 v note4 input capacitance ciss ? 5400 ? pf output capacitance coss ? 770 ? pf reverse transfer capacitance crss ? 100 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time td(on) ? 70 ? ns rise time tr ? 300 ? ns turn-off delay time td(off) ? 250 ? ns fall time tf ? 210 ? ns i d = 30 a r l = 4.7 ? v gs = 10 v rg = 10 ? total gate charge qg ? 148 ? nc gate to source charge qgs ? 30 ? nc gate to drain charge qgd ? 73 ? nc v dd = 220 v v gs = 10 v i d = 60 a body-drain diode forward voltage v df ? 1.10 1.65 v i f = 60 a, v gs = 0 note4 body-drain diode reverse recovery time trr ? 270 ? ns body-drain diode reverse recovery charge qrr ? 2.8 ? c i f = 60 a, v gs = 0 dif/dt = 100 a/ s notes: 4. pulse test
H5N2801P rev.1.00, oct.01. 2003, page 4 of 9 main characteristics 200 150 100 50 0 50 100 150 200 300 100 30 10 3 1 13 10 30 100 300 1000 100 80 60 40 20 0 4 8 12 16 20 200 160 120 80 40 0 246810 0.3 0.1 1000 ta = 25 c v gs = 5 v 5.5 v tc = 75 c 25 c ?25 c channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics 100 s 1 ms pw = 10 ms (1shot) dc operation (tc = 25 c) 10 s 6 v 7 v operation in this area is limited by r ds(on) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test pulse test 6.5 v 10 v 8 v
H5N2801P rev.1.00, oct.01. 2003, page 5 of 9 gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) 5 4 3 2 1 0 48 12 16 20 1 5 20 100 21050 0.2 0.1 0.05 0.02 0.01 0.1 0.08 0.06 0.04 0.02 ?40 0 40 80 120 160 0 0.2 0.5 2 5 20 50 100 100 20 50 5 10 2 0.5 1 0.2 110 25 c tc = ?25 c 75 c v gs = 10 v 10 a 30 a i d = 60 a i = 60 a d 30 a 10 a v gs = 10 v,15 v pulse test drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. drain current drain current i d (a) pulse test case temperature tc ( c) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. temperature pulse test drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v ds = 10 v pulse test
H5N2801P rev.1.00, oct.01. 2003, page 6 of 9 switching time t (ns) drain current i d (a) switching characteristics typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 0 20 40 60 80 100 20000 50000 10000 1000 2000 5000 500 400 300 200 100 0 20 16 12 8 4 40 80 120 160 200 0 10000 1000 10 100 0.1 0.3 1 3 10 30 100 200 500 100 50 v ds = 50 v 100 v 220 v v gs = 0 f = 1 mhz ciss coss crss i d = 60 a v dd v gs body-drain diode reverse recovery time di / dt = 100 a / s v gs = 0, ta = 25 c v ds = 220 v 100 v 50 v t r t d(on) t d(off) t f v gs = 10 v, v dd = 140 v pw = 5 s, duty < 1 % r g =10 ? t r reverse drain current i dr (a) reverse recovery time trr (ns) gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics t f
H5N2801P rev.1.00, oct.01. 2003, page 7 of 9 0 0.4 0.8 1.2 1.6 2.0 100 80 60 40 20 5 4 3 2 1 -50 0 50 100 150 200 0 case temperature tc ( c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v (v) gs(off) v ds = 10 v vin monitor d.u.t. vin 10 v r l v = 140 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 ? 90% 10% t f source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test switching time test circuit waveform v gs = 0 v 10 v 5 v i d = 10ma 1ma 0.1ma
H5N2801P rev.1.00, oct.01. 2003, page 8 of 9 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 0.833 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw ( s ) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width
H5N2801P rev.1.00, oct.01. 2003, page 9 of 9 package dimensions 3.2 0.2 4.8 0.2 1.5 0.3 2.8 0.6 0.2 1.0 0.2 18.0 0.5 19.9 0.2 15.6 0.3 0.5 1.0 5.0 0.3 1.6 1.4 max 2.0 2.0 14.9 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 package code jedec jeita mass (reference value) to-3p ? conforms 5.0 g as of january, 2003 unit: mm
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